TUKTAMYSHEV ARTUR

Tuktamyshev, A., Cesura, F., Vichi, S., Fedorov, A., Bietti, S., Sanguinetti, S. (2023). Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates. Intervento presentato a: Euro MBE Workshop, Madrid, Spain. Dettaglio

Barbiero, A., Tuktamyshev, A., Pirard, G., Huwer, J., M??ller, T., Stevenson, R., et al. (2022). Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate. PHYSICAL REVIEW APPLIED, 18(3) [10.1103/physrevapplied.18.034081]. Dettaglio

Tuktamyshev, A., Vichi, S., Cesura, F., Fedorov, A., Bietti, S., Chrastina, D., et al. (2022). Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control. JOURNAL OF CRYSTAL GROWTH, 600(15 December 2022) [10.1016/j.jcrysgro.2022.126906]. Dettaglio

Vichi, S., Bietti, S., Basso Basset, F., Tuktamyshev, A., Fedorov, A., Sanguinetti, S. (2022). Optically controlled dual-band quantum dot infrared photodetector. NANOMATERIALS AND NANOTECHNOLOGY, 12 [10.1177/18479804221085790]. Dettaglio

Anzi, L., Tuktamyshev, A., Fedorov, A., Zurutuza, A., Sanguinetti, S., Sordan, R. (2022). Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate. NPJ 2D MATERIALS AND APPLICATIONS, 6(1), 1-7 [10.1038/s41699-022-00302-y]. Dettaglio