TUKTAMYSHEV ARTUR

Tuktamyshev, A., Gherardi, M., Anzi, L., Freddi, S., Canciani, M., Vichi, S., et al. (2026). Self-assembled GaAs nanostructures on 4H-SiC(0001) with ultra-thin oxide layer. JOURNAL OF CRYSTAL GROWTH, 690(1 September 2026) [10.1016/j.jcrysgro.2026.128658]. Dettaglio

Tuktamyshev, A., Vichi, S., Beitti, S., Fedorov, A., Sanguinetti, S. (2025). High-purity single and entangled photon emission from droplet-epitaxy quantum dots on GaAs(111)A platform. In Low-Dimensional Materials and Devices 2025. SPIE [10.1117/12.3063052]. Dettaglio

Vichi, S., Asahi, S., Bietti, S., Tuktamyshev, A., Fedorov, A., Kita, T., et al. (2025). Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature. ACS PHOTONICS, 12(1), 447-456 [10.1021/acsphotonics.4c01856]. Dettaglio

Wyborski, P., Tuktamyshev, A., Jacobsen, M., Madigawa, A., Vichi, S., Gregersen, N., et al. (2025). High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform. ADVANCED QUANTUM TECHNOLOGIES, 8(11) [10.1002/qute.202500159]. Dettaglio

Vichi, S., Tuktamyshev, A., Mano, T., Kuroda, T., Sanguinetti, S. (2025). Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties. In V.M. Fomin (a cura di), Physics of Quantum Rings (pp. 183-233). Springer [10.1007/978-3-031-85915-1_7]. Dettaglio