PEZZOLI FABIO

Ruolo: 
Professore associato
Settore scientifico disciplinare: 
FISICA SPERIMENTALE (FIS/01)
Telefono: 
0264485175
Stanza: 
U05, Piano: P01, Stanza: 1070
Via Roberto Cozzi, 55 - 20125 MILANO

Pubblicazioni

  • Pezzoli, F. (2020). Spin-orbit phenomena in group IV heterostructures. Intervento presentato a: INTERNATIONAL WORKSHOP ON ELECTRIC CONTROL OF SPIN TRANSPORT AND SPIN TO CHARGE INTERCONVERSION - ECOS, Milano, Italy. Dettaglio
  • De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Amand, T., Marie, X., et al. (2019). Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon. Intervento presentato a: Joint ISTDM / ICSI 2019 Conference, 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, USA. Dettaglio
  • Pezzoli, F., Pedrini, J., Biagioni, P., Barzaghi, A., Ballabio, A., Bonera, E., et al. (2019). Optical properties of micron-sized crystals grown via 3D heteroepitaxy. Intervento presentato a: 2nd Joint ISTDM / ICSI 2019 Conference, 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, USA. Dettaglio
  • Marzo, A., Mahajneh, A., Mattavelli, S., Vitiello, E., Pezzoli, F., Bonera, E., et al. (2019). Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles. JOURNAL OF MATERIALS CHEMISTRY. C, 7(42), 13261-13266. Dettaglio
  • De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Grilli, E., Amand, T., et al. (2019). Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. PHYSICAL REVIEW. B, 99(3). Dettaglio