PEZZOLI FABIO

Ruolo:

Professore associato

Settore scientifico disciplinare:

FISICA SPERIMENTALE (FIS/01)

Afferenza:

E-mail:

Telefono:

0264485175

Stanza:

U05, Piano: P01, Stanza: 1070
Via Roberto Cozzi, 55 - 20125 MILANO

Pezzoli, F. (2020). Spin-orbit phenomena in group IV heterostructures. Intervento presentato a: INTERNATIONAL WORKSHOP ON ELECTRIC CONTROL OF SPIN TRANSPORT AND SPIN TO CHARGE INTERCONVERSION - ECOS, Milano, Italy. Dettaglio
De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Amand, T., Marie, X., et al. (2019). Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon. Intervento presentato a: Joint ISTDM / ICSI 2019 Conference, 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, USA. Dettaglio
Pezzoli, F., Pedrini, J., Biagioni, P., Barzaghi, A., Ballabio, A., Bonera, E., et al. (2019). Optical properties of micron-sized crystals grown via 3D heteroepitaxy. Intervento presentato a: 2nd Joint ISTDM / ICSI 2019 Conference, 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, USA. Dettaglio
Marzo, A., Mahajneh, A., Mattavelli, S., Vitiello, E., Pezzoli, F., Bonera, E., et al. (2019). Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles. JOURNAL OF MATERIALS CHEMISTRY. C, 7(42), 13261-13266. Dettaglio
De Cesari, S., Balocchi, A., Vitiello, E., Jahandar, P., Grilli, E., Amand, T., et al. (2019). Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. PHYSICAL REVIEW. B, 99(3). Dettaglio

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