MIGLIO LEONIDA

Ruolo:

Professore ordinario

Settore scientifico disciplinare:

FISICA DELLA MATERIA (FIS/03)

Afferenza:

E-mail:

Telefono:

0264485217

Stanza:

U05, Piano: P02, Stanza: 2063
Via Roberto Cozzi, 55 - 20125 MILANO

Reichmann, F., Scalise, E., Becker, A., Hofmann, E., Dabrowski, J., Montalenti, F., et al. (2022). New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation. APPLIED SURFACE SCIENCE, 571, 151264 [10.1016/j.apsusc.2021.151264]. Dettaglio
Scalise, E., Sarikov, A., Barbisan, L., Marzegalli, A., Migas, D., Montalenti, F., et al. (2021). Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires. APPLIED SURFACE SCIENCE, 545(15 April 2021) [10.1016/j.apsusc.2021.148948]. Dettaglio
Sarikov, A., Marzegalli, A., Barbisan, L., Zimbone, M., Bongiorno, C., Mauceri, M., et al. (2021). Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations. CRYSTENGCOMM, 23(7), 1566-1571 [10.1039/d0ce01613f]. Dettaglio
Agati, M., Boninelli, S., Calabretta, C., Mancarella, F., Mauceri, M., Crippa, D., et al. (2021). Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars. MATERIALS & DESIGN, 208(October 2021) [10.1016/j.matdes.2021.109833]. Dettaglio
Bergamaschini, R., Plantenga, R., Albani, M., Scalise, E., Ren, Y., Hauge, H., et al. (2021). Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting. NANOSCALE, 13(20), 9436-9445 [10.1039/d0nr08051a]. Dettaglio

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