BIETTI SERGIO
- U05, Piano: 2, Stanza: 2122
Pubblicazioni
Vichi, S., Asahi, S., Bietti, S., Tuktamyshev, A., Fedorov, A., Kita, T., et al. (2025). Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature. ACS PHOTONICS, 12(1), 447-456 [10.1021/acsphotonics.4c01856]. Dettaglio
Tuktamyshev, A., Vichi, S., Fedorov, A., Bietti, S., Sanguinetti, S. (2024). Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm. Intervento presentato a: International workshop on telecom quantum dot non-classical light sources for quantum communication (QDCom 2024) - June 12 - 14, 2024, Breslavia, Polonia. Dettaglio
Cesura, F., Vichi, S., Tuktamyshev, A., Bietti, S., Fedorov, A., Sanguinetti, S., et al. (2024). Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling. JOURNAL OF CRYSTAL GROWTH, 630(15 March 2024) [10.1016/j.jcrysgro.2024.127588]. Dettaglio
Vichi, S., Bietti, S., Tuktamyshev, A., Fedorov, A., Sanguinetti, S. (2024). Quantum-confined modulated nanostructure for optoelectronic devices. Intervento presentato a: The 21st International Symposium on the Physics of Semiconductors and Applications (ISPSA 2024), Jeju, Corea del Sud. Dettaglio
Tuktamyshev, A., Vichi, S., Bietti, S., Fedorov, A., Sanguinetti, S. (2024). Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2. CRYSTAL GROWTH & DESIGN, 24(22), 9673-9681 [10.1021/acs.cgd.4c01161]. Dettaglio