VICHI STEFANO

Tuktamyshev, A., Gherardi, M., Anzi, L., Freddi, S., Canciani, M., Vichi, S., et al. (2026). Self-assembled GaAs nanostructures on 4H-SiC(0001) with ultra-thin oxide layer. JOURNAL OF CRYSTAL GROWTH, 690(1 September 2026) [10.1016/j.jcrysgro.2026.128658]. Dettaglio

Canciani, M., Vichi, S., Koplak, O., Bietti, S., Sanguinetti, S. (2025). In situ control of GaN growth rate in nitrogen limited regime. Intervento presentato a: EuroMBE, Auron, France. Dettaglio

Vichi, S., Tuktamyshev, A., Mano, T., Kuroda, T., Sanguinetti, S. (2025). Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties. In V.M. Fomin (a cura di), Physics of Quantum Rings (pp. 183-233). Springer [10.1007/978-3-031-85915-1_7]. Dettaglio

Vichi, S., Asahi, S., Bietti, S., Tuktamyshev, A., Fedorov, A., Kita, T., et al. (2025). Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature. ACS PHOTONICS, 12(1), 447-456 [10.1021/acsphotonics.4c01856]. Dettaglio

Canciani, M., Vichi, S., Koplak, O., Bietti, S., Sanguinetti, S. (2025). In situ control of GaN growth rate in nitrogen-limited regime. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS, 43(3) [10.1116/6.0004437]. Dettaglio