Micro-Raman a triplo stadio.

La spettroscopia Raman è una tecnica ottica per accedere alle informazioni vibrazionali dei materiali. Attraverso queste informazioni è possibile risalire a diverse proprietà dei materiali, come la cristallinità, la fase, la composizione, lo stato di deformazione, la temperatura, e molte altre. E' utilizzabile anche con liquidi e gas. Queste informazioni possono essere acquisite a livello microscopico con una risoluzione inferiore al milionesimo di metro.

Specifiche tecniche. Il sistema è composto da uno spettrografo accoppiato a un doppio premonocromatore in sottrattivo. Range spettrale: 240 – 550 nm nominale con diverse sorgenti di eccitazione disponibili. Acquisizione di spettri a partire da pochi cm-1 di separazione spettrale dal laser di eccitazione; risoluzione spaziale limitata da diffrazione (< 1 µm); modalità confocale disponibile; stage motorizzato XY con passo 0.1 µm.

Edificio
U5; 1; 1075
Dipartimento
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Responsabile scientifico

BONERA EMILIANO

Voci tariffario
F.13; F.14
https://drive.google.com/file/d/1xv-wRm-YRXYX93zg718ACzj7Y3CuzZw3/view?usp=shar…
Sito tariffario
Immagine Cover

Pubblicazioni

  • Loretz, P; Tschirky, T; Isa, F; Patscheider, J; Trottmann, M; Wichser, A; Pedrini, J; Bonera, E; Pezzoli, F; Jaeger, D (2022) Conductive n-type gallium nitride thin films prepared by sputter deposition. Dettaglio
  • Bonaventura, E; Dhungana, D; Martella, C; Grazianetti, C; Macis, S; Lupi, S; Bonera, E; Molle, A (2022) Optical and thermal responses of silicene in Xene heterostructures. Dettaglio
  • Azadmand, M; Vichi, S; Cesura, F; Bietti, S; Chrastina, D; Bonera, E; Vanacore, G; Tsukamoto, S; Sanguinetti, S (2022) Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets. Dettaglio
  • Bonera, E; Molle, A (2022) Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate. Dettaglio
  • Faraone, G; Sipala, R; Mariani, M; Martella, C; Grazianetti, C; Molle, A; Bonera, E (2021) Probing the Laser Ablation of Black Phosphorus by Raman Spectroscopy. Dettaglio
  • Molle, A; Faraone, G; Lamperti, A; Chiappe, D; Cinquanta, E; Martella, C; Bonera, E; Scalise, E; Grazianetti, C (2021) Stability and universal encapsulation of epitaxial Xenes. Dettaglio
  • Faraone, G; Martella, C; Bonera, E; Molle, A; Grazianetti, C (2021) How Oxygen Absorption Affects the Al2O3-Encapsulated Blue Phosphorene–Au Alloy. Dettaglio
  • Toliopoulos, D; Fedorov, A; Bietti, S; Bollani, M; Bonera, E; Ballabio, A; Isella, G; Bouabdellaoui, M; Abbarchi, M; Tsukamoto, S; Sanguinetti, S (2020) Solid-state dewetting dynamics of amorphous ge thin films on silicon dioxide substrates. Dettaglio
  • Bietti, S; Basset, F; Tuktamyshev, A; Bonera, E; Fedorov, A; Sanguinetti, S (2020) High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots. Dettaglio
  • Martella, C; Faraone, G; Alam, M; Taneja, D; Tao, L; Scavia, G; Bonera, E; Grazianetti, C; Akinwande, D; Molle, A (2020) Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate. Dettaglio
  • Pedrini, J; Biagioni, P; Ballabio, A; Barzaghi, A; Bonzi, M; Bonera, E; Isella, G; Pezzoli, F (2020) Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals. Dettaglio
  • Faraone, G; Balduzzi, E; Martella, C; Grazianetti, C; Molle, A; Bonera, E (2020) Thickness determination of anisotropic van der Waals crystals by Raman spectroscopy: the case of black phosphorus. Dettaglio
  • Marzo, A; Mahajneh, A; Mattavelli, S; Vitiello, E; Pezzoli, F; Bonera, E; D'Arienzo, M; Fanciulli, M (2019) Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles. Dettaglio
  • Azadmand, M; Bonera, E; Chrastina, D; Bietti, S; Tsukamoto, S; Notzel, R; Sanguinetti, S (2019) Raman spectroscopy of epitaxial InGaN/Si in the central composition range. Dettaglio
  • Grazianetti, C; Faraone, G; Martella, C; Bonera, E; Molle, A (2019) Embedding epitaxial (blue) phosphorene in between device-compatible functional layers. Dettaglio
  • Basset, F; Bietti, S; Tuktamyshev, A; Vichi, S; Bonera, E; Sanguinetti, S (2019) Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution. Dettaglio
  • Dhayalan, S; Nuytten, T; Pourtois, G; Simoen, E; Pezzoli, F; Cinquanta, E; Bonera, E; Loo, R; Rosseel, E; Hikavyy, A; Shimura, Y; Vandervorst, W (2019) Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers. Dettaglio
  • Pezzoli, F; Pedrini, J; Biagioni, P; Barzaghi, A; Ballabio, A; Bonera, E; Miglio, L; Isella, G (2019) Optical properties of micron-sized crystals grown via 3D heteroepitaxy. Dettaglio
  • Basso Basset, F; Bietti, S; Reindl, M; Esposito, L; Fedorov, A; Huber, D; Rastelli, A; Bonera, E; Trotta, R; Sanguinetti, S (2018) High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy. Dettaglio
  • Montanari, M; Virgilio, M; Manganelli, C; Zaumseil, P; Zoellner, M; Hou, Y; Schubert, M; Persichetti, L; Di Gaspare, L; De Seta, M; Vitiello, E; Bonera, E; Pezzoli, F; Capellini, G (2018) Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells. Dettaglio
  • Bietti, S; Basso Basset, F; Reindl, M; Esposito, L; Fedorov, A; Huber, D; Rastelli, A; Bonera, E; Trotta, R; Sanguinetti, S (2018) High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy. Dettaglio
  • Azadmand, M; Barabani, L; Bietti, S; Chrastina, D; Bonera, E; Acciarri, M; Fedorov, A; Tsukamoto, S; Nötzel, R; Sanguinetti, S (2018) Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors. Dettaglio
  • Isa, F; Jung, A; Salvalaglio, M; Dasilva, Y; Marozau, I; Meduňa, M; Barget, M; Marzegalli, A; Isella, G; Erni, R; Pezzoli, F; Bonera, E; Niedermann, P; Sereda, O; Gröning, P; Montalenti, F; von Känel, H (2017) Strain Engineering in Highly Mismatched SiGe/Si Heterostructures. Dettaglio
  • Lodari, M; Chrastina, D; Mondiali, V; Barget, M; Frigerio, J; Bonera, E; Bollani, M (2017) Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures. Dettaglio
  • Marzegalli, A; Cortinovis, A; BASSO BASSET, F; Bonera, E; Pezzoli, F; Scaccabarozzi, A; Isa, F; Isella, G; Zaumseil, P; Capellini, G; Schroeder, T; Miglio, L (2017) Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001). Dettaglio
  • Bollani, M; Chrastina, D; Ruggeri, R; Nicotra, G; Gagliano, L; Bonera, E; Mondiali, V; Marzegalli, A; Montalenti, F; Spinella, C; Miglio, L (2016) Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning. Dettaglio
  • Marzegalli, A; Cortinovis, A; BASSO BASSET, F; Bonera, E; Pezzoli, F; Scaccabarozzi, A; Isa, F; Isella, G; Zaumseil, P; Capellini, G; Schröder, T; Miglio, L (2016) An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture. Dettaglio
  • Vitiello, E; Virgilio, M; Giorgioni, A; Frigerio, J; Gatti, E; DE CESARI, S; Bonera, E; Grilli, E; Isella, G; Pezzoli, F (2016) Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates. Dettaglio
  • Vitiello, E; Virgilio, M; Giorgioni, A; Frigerio, J; Gatti, E; DE CESARI, S; Bonera, E; Grilli, E; Isella, G; Pezzoli, F (2016) Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates. Dettaglio
  • Azadmand, M; Bietti, S; Barabani, L; Acciarri, M; BASSO BASSET, F; Bonera, E; Fedorov, A; Noetzel, R; Sanguinetti, S (2016) Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures. Dettaglio
  • BASSO BASSET, F; Bietti, S; Esposito, L; Bonera, E; Sanguinetti, S (2016) Excitonic fine structure in GaAs/AlGaAs (111) quantum dots grown by droplet epitaxy. Dettaglio
  • Pezzoli, F; Giorgioni, A; Gallacher, K; Isa, F; Biagioni, P; Millar, R; Gatti, E; Grilli, E; Bonera, E; Isella, G; Paul, D; Miglio, L (2016) Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates. Dettaglio
  • Isa, F; Jung, A; Salvalaglio, M; Dasilva, Y; Meduaňa, M; Barget, M; Kreiliger, T; Isella, G; Erni, R; Pezzoli, F; Bonera, E; Niedermann, P; Zweiacker, K; Neels, A; Dommann, A; Gröning, P; Montalenti, F; Von Känel, H (2016) Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals. Dettaglio
  • Barget, M; Lodari, M; Mondiali, V; Chrastina, D; Bollani, M; Bonera, E (2016) SiGe nanostructures inducing tensile strain in suspended germanium membranes.. Dettaglio
  • Isa, F; Salvalaglio, M; Dasilva, Y; Meduňa, M; Barget, M; Jung, A; Kreiliger, T; Isella, G; Erni, R; Pezzoli, F; Bonera, E; Niedermann, P; Gröning, P; Montalenti, F; von Känel, H (2016) Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. Dettaglio
  • Vitiello, E; Giorgioni, A; Virgilio, M; Frigerio, J; Gatti, E; DE CESARI, S; Bonera, E; Grilli, E; Isella, G; Pezzoli, F (2016) Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures. Dettaglio
  • Barget, M; Lodari, M; Borriello, M; Mondiali, V; Chrastina, D; Bollani, M; Bonera, E (2016) Tensile strain in Ge membranes induced by SiGe nanostressors. Dettaglio
  • Mondiali, V; Lodari, M; Chrastina, D; Barget, M; Bonera, E; Bollani, M (2015) Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching. Dettaglio
  • Vitiello, E; Virgilio, M; Giorgioni, A; Frigerio, J; Gatti, E; DE CESARI, S; Bonera, E; Grilli, E; Isella, G; Pezzoli, F (2015) Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates. Dettaglio
  • Barget, M; Bollani, M; Chrastina, D; Gagliano, L; Rossetto, L; Scopece, D; Mondiali, V; Frigerio, J; Borriello, M; Lodari, M; Pezzoli, F; Montalenti, F; Bonera, E (2015) SiGe nano-stressors for Ge strain-engineering. Dettaglio
  • Bollani, M; Chrastina, D; Gagliano, L; Rossetto, L; Scopece, D; Barget, M; Mondiali, V; Frigerio, J; Lodari, M; Pezzoli, F; Montalenti, F; Bonera, E (2015) Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures. Dettaglio
  • Scarpellini, D; Somaschini, C; Fedorov, A; Bietti, S; Frigeri, C; Grillo, V; Esposito, L; Salvalaglio, M; Marzegalli, A; Montalenti, F; Bonera, E; Medaglia, P; Sanguinetti, S (2015) InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires. Dettaglio
  • Vanacore, G; Nicotra, G; Zani, M; Bollani, M; Bonera, E; Montalenti, F; Capellini, G; Isella, G; Osmond, J; Picco, A; Boioli, F; Tagliaferri, A (2015) Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source. Dettaglio
  • Gagliano, L; Rossetto, L; Scopece, D; Mondiali, V; Lodari, M; Giorgioni, A; Pezzoli, F; Bollani, M; Chrastina, D; Montalenti, F; Bonera, E (2014) Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures. Dettaglio
  • Miglio, L; Bergamaschini, R; Bietti, S; Bonera, E; Grilli, E; Guzzi, M; Marzegalli, A; Montalenti, F; Pezzoli, F; Salvalaglio, M; Sanguinetti, S; Scaccabarozzi, A; Falub, C; Isa, F; Kreiliger, T; Taboada, A; Chrastina, D; Frigerio, I; Isella, G; Meduna, M; Wewior, L; Fuster, D; Alen, B; Bollani, M; Dommann, A; Neels, A; Niedermann, P; Frigeri, C; Fompeyrine, J; Richter, M; Uccelli, E; Mancarella, F; von Kanel, H (2014) Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale. Dettaglio
  • Vanacore, G; Zani, M; Bollani, M; Bonera, E; Nicotra, G; Osmond, J; Capellini, G; Isella, G; Tagliaferri, A (2014) Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source. Dettaglio
  • Gagliano, L; Rossetto, L; Scopece, D; Mondiali, V; Lodari, M; Barget, M; DE CESARI, S; Pezzoli, F; Bollani, M; Chrastina, D; Montalenti, F; Bonera, E (2014) Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures.. Dettaglio
  • DE CESARI, S; Giorgioni, A; Barget, M; Bonera, E; Grilli, E; Guzzi, M; Pezzoli, F (2014) Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence. Dettaglio
  • Mondiali, V; Bollani, M; Chrastina, D; Rubert, R; Chahine, G; Richard, M; Cecchi, S; Gagliano, L; Bonera, E; Schülli, T; Miglio, L (2014) Strain release management in SiGe/Si films by substrate patterning. Dettaglio
  • Bonera, E (2014) Group IV membranes. Dettaglio
  • Frigeri, C; Bietti, S; Scaccabarozzi, A; Bergamaschini, R; Falub, C; Grillo, V; Bollani, M; Bonera, E; Niedermann, P; von Känel, H; Sanguinetti, S; Miglio, L (2014) A Structural Characterization of GaAs MBE Grown on Si Pillars. Dettaglio
  • Giorgioni, A; Vitiello, E; Grilli, E; Bonera, E; Guzzi, M; Pezzoli, F (2014) Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations. Dettaglio
  • Scopece, D; Montalenti, F; Bonera, E; Bollani, M; Chrastina, D (2014) Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis. Dettaglio
  • Bietti, S; Scaccabarozzi, A; Frigeri, C; Bollani, M; Bonera, E; Falub, C; von Känel, H; Miglio, L; Sanguinetti, S (2013) Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale. Dettaglio
  • Bonera, E; Bollani, M; Chrastina, D; Pezzoli, F; Picco, A; Schmidt, O; Terziotti, D (2013) Substrate strain manipulation by nanostructure perimeter forces. Dettaglio
  • Miglio, L; Bietti, S; Scaccabarozzi, A; Bergamaschini, R; Frigeri, C; Isella, G; Isa, F; Falub, C; Bonera, E; Bollani, M; Niedermann, P; von Kanel, H; Sanguinetti, S (2013) Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals. Dettaglio
  • Bonera, E; Gatti, R; Isella, G; Norga, G; Picco, A; Grilli, E; Guzzi, M; Texier, M; Pichaud, B; von Känel, H; Miglio, L (2013) Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor. Dettaglio
  • Picco, A; Bonera, E; Pezzoli, F; Grilli, E; Schmidt, O; Isa, F; Cecchi, S; Guzzi, M (2012) Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy. Dettaglio
  • Bollani, M; Chrastina, D; Fiocco, M; Mondiali, V; Frigerio, J; Gagliano, L; Bonera, E (2012) Lithographically defined low dimensional SiGe nanostripes as silicon stressors. Dettaglio
  • Polignano, M; Mica, I; Carnevale, G; Mauri, A; Bonera, E; Speranza, S (2012) Defect Generation in Device Processing and Impact on the Electrical Performances. Dettaglio
  • Falub, C; Kreiliger, T; Taboada, A; Isa, F; Chrastina, D; Isella, G; Muller, E; Meduna, M; Bergamaschini, R; Marzegalli, A; Bonera, E; Pezzoli, F; Miglio, L; Niedermann, P; Neels, A; Pezous, A; Kaufmann, R; Dommann, A; Kanel, H (2012) Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon. Dettaglio
  • Bollani, M; Chrastina, D; Montuori, V; Terziotti, D; Bonera, E; Vanacore, G; Tagliaferri, A; Sordan, R; Spinella, C; Nicotra, G (2012) Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy. Dettaglio
  • Sambi, M; Merlini, D; Galbiati, P; Bonera, E; Belletti, F (2011) A novel 0.16 um 300 V SOIBCD for ultrasound medical applications. Dettaglio
  • Nanver, L; Jovanovic, V; Biasotto, C; Moers, J; Grützmacher, D; Zhang, J; Hrauda, N; Stoffel, M; Pezzoli, F; Schmidt, O; Miglio, L; Kosina, H; Marzegalli, A; Vastola, G; Mussler, G; Stangl, J; Bauer, G; Cingel, J; Bonera, E (2011) Integration of MOSFETs with SiGe dots as stressor material. Dettaglio
  • Picco, A; Bonera, E; Grilli, E; Giarola, M; Mariotto, G; Chrastina, D; Guzzi, M (2010) Determination of Raman Efficiency in SiGe Alloys. Dettaglio
  • Bollani, M; Bonera, E; Chrastina, D; Fedorov, A; Montuori, V; Picco, A; Tagliaferri, A; Vanacore, G; Sordan, R (2010) Ordered Arrays of SiGe Islands from Low-Energy PECVD. Dettaglio
  • Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E (2010) Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition. Dettaglio
  • Picco, A; Bonera, E; Grilli, E; Guzzi, M (2010) Raman efficiency in SiGe alloys. Dettaglio